Evaluation of Damage Formation and Recovery in Ion Implanted Beta-Ga2O3 by Low Energy Cathodoluminescence

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Ion implantation and annealing are important process in device manufacturing. Low-energy cathodoluminescence (CL) is highly sensitive to the damage caused by ion implantation and suitable for process optimization and failure analysis in Beta-Ga2O3 based devices.

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Evaluation of Damage Formation and Recovery in Ion Implanted Beta-Ga2O3 by Low Energy Cathodoluminescence

Click below to download this White Paper

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