Focused Ion Beam Scanning Electron Microscopy (FIB-SEM)

FIB-SEM cross-section of a pixel array, showing underlying nm-scale device features

Like other high-resolution scanning electron microscopes, Focused-ion-beam scanning electron microscopes (FIB-SEMs) are used to produce 2D and 3D images of surface topography and can resolve nm-scale features on a sample surface.

The FIB allows advanced analytical workflows such as cross-section, tomography, lithography, lamella prep, etc.

Strengths

Ultra-high resolution imaging capabilities (limit resolution is < 1 nm)
Able to image multi-modal, sub-surface, and 3D information
FIB enables precise manipulation of sample in-situ: cutting, cleaving, trenching, exposing, and ion-welding of different fragments on the sample for imaging and analysis

Limitations

Analysis is destructive
Insulating materials impair precision of ion beam action and reduce imaging resolution

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Example Outputs Instruments Used How FIB-SEM Works

Focused Ion Beam Scanning Electron Microscopy Services

Focused Ion Beam Scanning Electron Microscopy

Like other high-resolution scanning electron microscopes, Focused-ion-beam scanning electron microscopes (FIB-SEMs) are used to produce 2D and 3D images of surface topography and can resolve nm-scale features on a sample surface.

The FIB allows advanced analytical workflows such as cross-section, tomography, lithography, lamella prep, etc.

Sample Requirements

Solid phase
Must be vacuum stable
Maximum Sample Height: 55 mm
Maximum Sample Weight: 500 g (including sample-holder)
Maximum Lateral Dimension: 150 mm (larger samples enabled with reduced rotation)

Example Outputs

FIB-SEM cross-section of a pixel array, showing underlying nm-scale device features.

Instruments Used

ThermoFisher Scientific Helios 5 UC (x3)

Maximum Horizontal Field Width: 2.3 mm at 4 mm WD
Electron Beam:
- Resolution Limit: 0.7 nm at 1 kV
- Current Range: 0.8 pA to 100 nA
- Accelerating Voltage Range: 350 V to 30 kV
Ion Beam:
Electron Beam:
- Resolution Limit: 4.0 nm at 30 kV using preferred statistical method
- Current Range: 1 pA to 100 nA
- Accelerating Voltage Range: 500 V to 30kV

View Instrument Brochure

ThermoFisher Scientific Helios 5 UX

The features of the Helios 5 UC, di

Phoenix Ion Column with superior high-current and low-voltage performance
- Ion beam current range: 1 pA – 65 nA
- Accelerating voltage range: 500 V – 30 kV
- Time-of-flight (TOF) correction
The Helios 5 UX DualBeam features an ultra-high-brightness electron source with next-generation UC+ monochromator technology to reduce the beam energy spread below 0.2 eV for beam currents up to 100 pA

View Instrument Brochure

ThermoFisher Scientific Scios

Optimized to achieve best performance across a wide array of sample types.

Powerful charge neutralization
Enables analysis on magnetic samples
Able to operate above vacuum pressure

How FIB-SEM Works

On a FIB-SEM, the added focused-ion-beam allows for in situ sample manipulation. Normally the FIB beam is used to cross-section the sample at a precise location, but it can accomplish many other tasks such as: tomography, lithography, lamella prep, and more.

The imaging capabilities of the scanning-electron-beam in a FIB-SEM work as they do in any other SEM: the system generates an image by detecting electrons scattered by a highly-focused, high-energy applied electron beam as it is raster-scanned over the surface of a sample.

The secondary focused-ion-beam is comprised of high-energy, charged atoms (most commonly Ga+). When applied to the sample, the FIB can be tuned to either ablate material from the surface, or deposit atoms of an accompanying neutral gas.

Additionally, both in-house FIB-SEM instruments at Covalent also incorporate energy dispersive spectroscopy (EDS) detectors that enable measurement and mapping of elemental composition alongside all other FIB-SEM operations.