Secondary-Ion Mass Spectroscopy (SIMS) Services
Secondary-ion mass spectrometry (SIMS) is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm. Due to the large variation in ionization probabilities among different materials, SIMS is generally considered to be a qualitative technique, although quantitation is possible with the use of standards. SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion.
|SIM Technique||Typical Applications|
|ToF-SIMS||ToF-SIMS analyses can be performed on any slid material stable under ultrahigh vacuum conditions Solid materials include semiconductor devices, polymers, dried paint and coatings, biomaterials, pharmaceuticals, glasses, papers, polymers, rubbers, ceramics, metals and other materials ToF-SIMS can identify reagents and byproducts involved in sample synthesis, as well as contaminants and absorbed materials on the surface It has fast-growing applications in biochemistry and bioengineering for its imaging and chemical mapping properties ToF-SIMS is used in a variety of other industries in assaying adhesion, corrosion, diffusion and segregation of different chemical compounds||Sample ion maps of the distribution of O-, CH-, SN2-, Si-, and Cl- in powdered material Sample negative ion mass spectrum output|
|D-SIMS||Analysis of trace elements (for example, dopants or contaminants in semiconductors) Sputter-removing material from the sample enables dynamic SIMS to determine the changes in composition or the diffusion of impurities from layer to layer Variable primary-ion conditions allow depth resolutions of <10 nm||Depth profile of AllnGaP LED device High precision depth profiles of a boron implanted Si sample.|