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Dopant Carrier distribution analysis for SiC-MOSFET

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Dopant Carrier distribution analysis for SiC-MOSFET

NanoSIMS 50L has the highest spatial resolution of secondary ion mass spectrometry, and can perform imaging analysis with high sensitivity and mass resolution. Here, we introduce the cross-sectional analysis of SiC-MOSFET using NanoSIMS and SCM.


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