Home Resource Dopant Carrier distribution analysis for SiC-MOSFET

Dopant Carrier distribution analysis for SiC-MOSFET

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Analysis of dopant carrier distribution in a SiC-MOSFET performed by Covalent Metrology, ensuring optimal device performance.

NanoSIMS 50L has the highest spatial resolution of secondary ion mass spectrometry, and can perform imaging analysis with high sensitivity and mass resolution. Here, we introduce the cross-sectional analysis of SiC-MOSFET using NanoSIMS and SCM.

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About Covalent Metrology

Covalent Metrology is a disruptive analytical services laboratory and platform based in Sunnyvale, California. Its mission is to help companies using advanced materials and nanoscale devices accelerate product development with deeper insights and better analytical data. Covalent offers comprehensive solutions and services that integrate state-of-the-art lab infrastructure, world-class experts in a wide array of analytical techniques, and modern data management and analysis.

Covalent now has over 500 customers in 30+ industries.

Learn more at: https://covalentmetrology.com