Total Reflection X-ray Fluorescence (TXRF)

TXRF is a surface sensitive elemental analysis technique used to determine the concentration of trace metal contamination on wafer surfaces.

Strengths

Ultra-trace sensitivity (down to 1E10 atoms/cm²)
Non-destructive wafer surface analysis
Minimal sample preparation
High throughput with automated wafer handling
Excellent repeatability and reproducibility
Wide elemental range (Na to U)
Contamination mapping and site-specific measurement

Limitations

Primarily surface-sensitive; not for bulk analysis
Requires flat, reflective wafer surfaces
Interference from thick films or rough surfaces
Limited lateral resolution compared to microscopy techniques

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Example Outputs Instruments Used How TXRF Works

Sample Requirements

Flat, polished surfaces (e.g., silicon wafers)
Wafer sizes: 200 mm and 300 mm
Dry and particle-free surface, no surface debris or water droplets
Compatible with semiconductor process materials

TXRF Example Outputs

Example Output 1

Map of the magnesium contamination across a wafer surface

Example Output 2

Map of Iron and Cobalt contamination across a wafer surface

TXRF Instruments Used

Rigaku TXRF-V310

Elemental range: Na (Z=11) to U (Z=92)
Detection limit: ~1E10 atoms/cm² (element dependent)
Wafer size: 200 mm and 300 mm
Throughput: Up to 80 wafers/hour
Atmosphere: Vacuum or helium purge options
Measurement modes: Single-point, multi-point, and mapping
Software: Automated quantification and contamination trend analysis
High-power W-anode X-ray source (9 kW rotating anode)
3 excitation energies optimized for light, transition, and heavy elements
XYθ sample stage
Dual FOUP load ports

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How TXRF Works

Total Reflection X-ray Fluorescence (TXRF) works by directing a collimated X-ray beam at a shallow, grazing angle onto a sample surface, typically a silicon wafer. At this incident angle, total external reflection occurs, limiting interaction with the near surface of the wafer, minimizing background noise and enhancing sensitivity to trace elements on the surface. When excited by the X-ray beam atoms on the wafer surface emit characteristic fluorescent X-rays, which are then detected; the concentration is quantified using reference standards.

Why Use TXRF?

Because the grazing incidence X-rays only interact with the top few nanometers of the sample TXRF is highly surface-sensitive and ideal for detecting trace metal contamination close to the sample surface.

The TXRF-V310 features automatic wafer handling, contamination mapping, and advanced software for quantifying elements at or below 1E10 atoms/cm². Its high sensitivity and repeatability enable fabs to monitor incoming wafers, tools, and process contamination effectively.

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