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Focused Ion Beam Scanning Electron Microscopy
Like other high-resolution scanning electron microscopes, Focused-ion-beam scanning electron microscopes (FIB-SEMs) are used to produce 2D and 3D images of surface topography, and are able to resolve nm-scale features on a sample surface. On a FIB-SEM, the added focused-ion-beam allows for in situ sample manipulation. Normally the FIB beam is used to cross-section the sample at a precise location. The FIB allows advanced analytical workflows such as: cross-section, tomography, lithography, lamella prep, and many others.
The imaging capabilities of the scanning-electron-beam in a FIB-SEM work as they do in any other SEM: the system generates an image by detecting electrons scattered by a highly-focused, high-energy applied electron beam as it is raster-scanned over the surface of a sample. The secondary focused-ion-beam is comprised of high-energy, charged atoms (most commonly Ga+). When applied to the sample, the FIB can be tuned to either ablate material from the surface, or deposit atoms of an accompanying neutral gas. Additionally, both in-house FIB-SEM instruments at Covalent also incorporate energy dispersive spectroscopy (EDS) detectors that enable measurement and mapping of elemental composition alongside all other FIB-SEM operations.
- Ultra-high resolution imaging capabilities (limit resolution is < 1 nm)
- Able to image multi-modal, sub-surface, and 3D information
- FIB enables precise manipulation of sample in-situ: cutting, cleaving, trenching, exposing, and ion-welding of different fragments on the sample for imaging and analysis
- Analysis is destructive
- Insulating materials impair precision of ion beam action and reduce imaging resolution
- Solid phase
- Must be vacuum stable
- Maximum Sample Height: 55 mm
- Maximum Sample Weight: 500 g (including sample-holder)
- Maximum Lateral Dimension: 150 mm (larger samples enabled with reduced rotation)
Thermo Scientific Helios 5 DualBeam
- Maximum Horizontal Field Width: 2.3 mm at 4 mm WD
- Electron Beam:
- Resolution Limit: 0.7 nm at 1 kV
- Current Range: 0.8 pA to 100 nA
- Accelerating Voltage Range: 350 V to 30 kV
- Ion Beam:
- Electron Beam:
- Resolution Limit: 4.0 nm at 30 kV using preferred statistical method
- Current Range: 1 pA to 100 nA
- Accelerating Voltage Range: 500 V to 30kV
- View Instrument Spec Sheet
Thermo Scientific Scios DualBeam
Optimized to achieve best performance across a wide array of sample types.
- Powerful charge neutralization
- Enables analysis on magnetic samples
- Able to operate above vacuum pressure
FIB-SEM cross-section of a pixel array, showing underlying nm-scale device features.
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