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Evaluation of Defects in Si-based Power Devices by Cathodoluminescence (CL)

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Evaluation of Defects in Si-based Power Devices by Cathodoluminescence (CL)

Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have been investigated for next-generation power devices. However, silicon (Si) is still the most important semiconductor. Failure analysis and process optimization by cathodoluminescence (CL) are presented.


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