Home Resource Evaluation of Defects in Si-based Power Devices by Cathodoluminescence (CL)

Evaluation of Defects in Si-based Power Devices by Cathodoluminescence (CL)

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Evaluation of defects in silicon power devices using cathodoluminescence by Covalent Metrology, promoting device reliability.

Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have been investigated for next-generation power devices. However, silicon (Si) is still the most important semiconductor. Failure analysis and process optimization by cathodoluminescence (CL) are presented.


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