SEM / SCANNING ELECTRON MICROSCOPY SERVICES
SEM, FIB-SEM, SEM-EDS
Scanning Electron Microscopy is used in a broad array of techniques to characterize materials and devices as well as to prepare samples for characterization by other techniques. Covalent has broad capabilities in SEM & HR SEM, wide area SEM, CD-SEM, defect review SEM, SEM-EDX and FIB-SEM. For a high-level summary of our SEM related services, please refer to the table below.
Contact us with any questions regarding our scanning electron microscopy (SEM) services.
|SEM Technique||Typical Measurements|
|SEM & HR-SEM||SEM enables measurement and imaging of sample surfaces to a resolution of ~10nm|
High-resolution SEM utilizes a mono-chromatic, thermal field-emission electron gun, to achieve imaging resolution down to sub-nm scale on ideal sample types
|SEM & FE-SEM||Related techniques to ascertain particle size, feature dimensions, surface imaging, sample structure,etc.|
Top-down and cross-sectional variants.
|CD-SEM||To measure defect size, layer thickness, surface roughness, etc.|
|Defect Review SEM||To image a specific sample site for defects.|
|FIB-SEM||Combines the imaging capabilities of an SEM, with an extra column that utilizes a focused beam of ions to mill/remove material, at site-specific locations.|
Top down and cross-sectional variants.
|SEM-EDS||Combines SEM with energy dispersive X-ray Spectroscopy to generate composition maps.|
Scanning Electron Microscopy (SEM & FE-SEM)
Scanning electron microscopy (SEM) is an essential tool for virtually all materials sciences projects, including advanced materials and thin films. SEM measurement techniques are used for high magnification and high-resolution observation of sample surfaces. Scanning electron microscopy uses an electron beam to explore the surface of a sample. The interaction of these electrons with the specimen causes various signals to be emitted, such as secondary electrons, backscattered electrons, Auger electrons, cathodoluminescence, and X-rays. Capturing and analyzing these signals yields a wealth of information about the sample’s morphology and texture, chemical composition, and crystalline structure.
All materials development, thin films development, semiconductors, optical components, and coatings are common uses of scanning electron microscopy.
- Surface imaging
- Particle sizes and features dimensions (including film thickness, features height) with calibrated instruments
- Top-Down SEM: used to image the top surface of the sample to look for defects
- Cross-sectional SEM (X-SEM): used to look at the sample structure
- CD-SEM: used to produce dimensional information such as defect size, layer thickness, surface roughness
- Defect Review SEM: used to navigate to a particular location on a sample normally supplied by another inspection tool and image the defect or help in particle identification
Uses & Limitations:
- What Covalent Metrology’s scanning electron microscopy services are great for:
- Combining surface topography and elemental mapping
- Rapid-high resolution imaging technique
- Sample preparation can be required and destructive (limits on sample size, non-conductive samples need to be coated)
- Functional properties mapping limited
- Surface topography quantification impossible in 3 dimensions
- Samples must be vacuum compatible
- Electrostatically focused SEM required for magnetic samples since magnetic sample’s resolution degraded when magnetically focused systems (the most common type of SEM) are used
Contact us for more information regarding our SEM measurement and imaging services.
Focused Ion Beam SEM (FIB-SEM)
A FIB/SEM tool combines a FIB (focused ion beam) column along with the capabilities of an SEM. The FIB column is typically used for ion-milling of materials (i.e. removal), to enable site-specific investigation of sub-surface features by SEM (i.e. X-SEM). The FIB column can also be used for imaging samples, when electron beam contrast mechanisms fail to produce adequate signal for imaging.
A typical use for FIB-SEM is site-specific TEM sample preparation. Material around a region of interest is milled/removed, and then the sample (lamella, or region of interest) is removed using a nano-manipulated probe and placed on a TEM grid. The lamella is further thinned by the FIB to a final thickness between 20-70nm thick. The FIB also allows users to site specifically deposit Pt or C bands (in situ deposition), which help hold structures together during manipulation. In situ deposition is also particularly important for device editing, generation of ohmic contacts, protecting bean sensitive areas, and other sample-modification applications.
|Top-Down SEM||Uses the electron beam to image the top surface of the sample to look for defects|
|Cross-sectional SEM (X-SEM)||Uses the electron beam to look at the sample structure, layer thickness, layer roughness, voids….|
|Top-down FIB||Uses the ion beam to image the top surface of the sample to look for defects and structure|
|Cross-section FIB||Uses the ion beam to look at the sample structure, layer thickness, layer roughness, voids….|